Display device

ABSTRACT

A display device includes a substrate including a display area, a non-display area, a first additional area connected to the non-display area at a first boundary, and a second additional area connected to the first additional area at a second boundary, pixels on the display area, an encapsulation film on the pixels, electrodes on the encapsulation film, pads on the second additional area, sensing wires connecting the electrodes and the pads, a first sensing insulating film on the encapsulation film, and a second sensing insulating film on the first sensing insulating film. The substrate includes a curved first side in the first additional area and the first additional area decreases in width from the first boundary to the second boundary, and a boundary of the first sensing insulating film is closer to the first side than a boundary of the second sensing insulating film is to the first side.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 10-2019-0061147, filed on May 24, 2019, in the KoreanIntellectual Patent Office (KIPO) the entire content of which isincorporated herein by reference.

BACKGROUND 1. Field

The disclosure relates to a display device.

2. Description of the Related Art

As the information technology field develops, the importance of thedisplay device, which is a connection medium between a user andinformation, increases. Accordingly, use of a display device such as aliquid crystal display device, an organic light emitting display device,and a plasma display device has been increasing.

In particular, user demand for bendable displays has been increasing.However, a large stress is applied to a bending area of the bendabledisplay as compared with other areas of the display, and thus, a measurefor substantially preventing or preventing a crack from forming due tothe stress is desirable.

SUMMARY

Aspects of example embodiments are directed to a display device capableof reducing stress applied to a bending area.

A display device according to an embodiment of the disclosure includes asubstrate including a display area, a non-display area surrounding anouter periphery of the display area, a first additional area connectedto the non-display area at a first boundary, and a second additionalarea connected to the first additional area at a second boundary, pixelson the display area, an encapsulation film on the pixels, sensingelectrodes on the encapsulation film, pads on the second additionalarea, sensing wires connecting the sensing electrodes and the pads, afirst sensing insulating film on the encapsulation film, and a secondsensing insulating film on the first sensing insulating film, thesensing electrodes, and the sensing wires. The substrate includes acurved first side in the first additional area and the first additionalarea decreases in width from the first boundary to the second boundary,and a boundary of the first sensing insulating film is closer to thefirst side than a boundary of the second sensing insulating film is tothe first side.

The boundary of the first sensing insulating film may not be covered bythe second sensing insulating film.

The substrate may include a first bending area extending from the firstside to overlap the non-display area.

The boundary of the first sensing insulating film and the boundary ofthe second sensing insulating film may be on the first bending area.

The second additional area may include a second bending area, and thefirst bending area and the second bending area do not overlap.

The encapsulation film may include an organic film, the display devicemay further include a dam at a boundary of the organic film, and theboundary of the second sensing insulating film may be closer to thefirst side than to the dam.

The encapsulation film may include an organic film, the display devicemay further include a dam at a boundary of the organic film, and theboundary of the second sensing insulating film may be farther from thefirst side than to the dam.

The boundary of the second sensing insulating film may be closer to thefirst side than to the sensing wires.

The first sensing insulating film may be between the encapsulation filmand the sensing wires.

The sensing electrodes may be on the first sensing insulating film, thedisplay device may further include bridge electrodes under the firstsensing insulating film, and the sensing electrodes may be connected tothe bridge electrodes through contact holes of the first sensinginsulating film.

The sensing electrodes may be under the first sensing insulating film,the display device may further include bridge electrodes on the firstsensing insulating film, and the bridge electrodes may be connected tothe sensing electrodes through contact holes of the first sensinginsulating film.

The first sensing insulating film may be between the sensing wires andthe second sensing insulating film.

The sensing electrodes may be on the first sensing insulating film, thedisplay device may further include bridge electrodes under the firstsensing insulating film, and the sensing electrodes may be connected tothe bridge electrodes through contact holes of the first sensinginsulating film.

The sensing electrodes may be under the first sensing insulating film,the display device may further include bridge electrodes on the firstsensing insulating film, and the bridge electrodes may be connected tothe sensing electrodes through contact holes of the first sensinginsulating film.

A display device according to an embodiment of the disclosure includes asubstrate including a display area, a non-display area surrounding anouter periphery of the display area, a first additional area connectedto the non-display area at a first boundary, and a second additionalarea connected to the first additional area at a second boundary, pixelson the display area, an encapsulation film on the pixels, sensingelectrodes on the encapsulation film, pads on the second additionalarea, sensing wires connecting the sensing electrodes and the pads, afirst sensing insulating film on the encapsulation film, and a secondsensing insulating film on the first sensing insulating film, thesensing electrodes, and the sensing wires. The substrate includes acurved first side in the first additional area and the first additionalarea decreases in width from the first boundary to the second boundary,and a boundary of the second sensing insulating film is spaced apartfrom the first side by 200 μm or more.

The first side of the first additional area and the non-display area maycommonly include a first bending area, the second additional area mayinclude a second bending area, and the first bending area and the secondbending area do not overlap.

The encapsulation film may include an organic film, the display devicemay further include a dam at a boundary of the organic film, and theboundary of the second sensing insulating film may be closer to thefirst side than to the dam.

The encapsulation film may include an organic film, the display devicemay further include a dam at a boundary of the organic film, and theboundary of the second sensing insulating film may be farther from thefirst side than to the dam.

The boundary of the second sensing insulating film may be closer to thefirst side than to the sensing wires.

A display device according to an embodiment of the disclosure includes asubstrate including a display area, a non-display area surrounding anouter periphery of the display area, a first additional area connectedto the non-display area at a first boundary, and a second additionalarea connected to the first additional area at a second boundary, pixelson the display area, an encapsulation film on the pixels, sensingelectrodes on the encapsulation film, pads on the second additionalarea, sensing wires connecting the sensing electrodes and the pads, anda sensing insulating film on the sensing electrodes and the sensingwires. The substrate includes a curved first side in the firstadditional area and the first additional area decreases in width fromthe first boundary to the second boundary, the substrate includes afirst bending area extending from the first side to overlap thenon-display area, and, in the first bending area, a boundary of thesensing insulating film is farther from the first side from a firstpoint of the first side crossing (e.g., intersecting) the first boundarythan to a second point of the first side crossing (e.g., intersecting)the second boundary.

Aspects of example embodiments of the display device according to thedisclosure are directed to reducing stress applied to a bending area.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features of the invention will become more apparentby describing in further detail exemplary embodiments thereof withreference to the accompanying drawings, in which:

FIG. 1 is a diagram for describing a substrate according to anembodiment of the disclosure;

FIG. 2 is a diagram for describing a display device according to anembodiment of the disclosure;

FIG. 3 is an enlarged view of a portion of a first additional area ofFIG. 2;

FIG. 4 is a diagram for describing an effect of increasing a separationdistance of a second sensing insulating film from a first side;

FIG. 5 is an embodiment of a cross section taken along a line I-I′ ofFIG. 2;

FIGS. 6-8 are cross-sections taken along a line II-II′ of FIG. 2;

FIG. 9 is an embodiment of the cross-section taken along the line I-I′of FIG. 2;

FIGS. 10-12 are embodiments of the cross section taken along the lineII-II′ of FIG. 2;

FIGS. 13-16 are embodiments of the cross section taken along the lineI-I′ of FIG. 2;

FIGS. 17 and 18 are diagrams for describing sensing electrodes andbridge electrodes according to an embodiment of the disclosure;

FIG. 19 is a diagram for describing sensing electrodes and bridgeelectrodes according to an embodiment of the disclosure;

FIG. 20 is an enlarged view of a portion of the first additional areaaccording to an embodiment different from FIG. 3;

FIG. 21 is an embodiment of a cross section taken along the line I-I′ ofFIG. 2, in accordance with the embodiment of FIG. 20;

FIGS. 22-24 are embodiments of cross sections taken along the lineII-II′ of FIG. 2, in accordance with the embodiment of FIG. 20;

FIGS. 25 and 26 are embodiments of the sense electrodes and the sensingwires in accordance with the embodiment of FIG. 20; and

FIGS. 27-29 are diagrams for describing a pixel according to anembodiment of the disclosure.

DETAILED DESCRIPTION

Hereinafter, various embodiments of the disclosure will be described inmore detail with reference to the accompanying drawings so that thoseskilled in the art may easily carry out the disclosure. The disclosuremay be implemented in various different forms and is not limited to theembodiments described herein.

In order to clearly describe the disclosure, parts that are not relatedto the description are omitted, and the same or similar elements aredenoted by the same reference numerals throughout the specification.Therefore, the above-described reference numerals may be used in otherdrawings.

In addition, sizes and thicknesses of each component shown in thedrawings are arbitrarily shown for convenience of description, and thusthe disclosure is not necessarily limited to those shown in thedrawings. In the drawings, thicknesses may be exaggerated to clearlyexpress various layers and areas.

It will be understood that, although the terms “first”, “second”,“third”, etc., may be used herein to describe various elements,components, regions, layers and/or sections, these elements, components,regions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one element, component, region,layer or section from another element, component, region, layer orsection. Thus, a first element, component, region, layer or sectiondiscussed below could be termed a second element, component, region,layer or section, without departing from the spirit and scope of theinventive concept.

Spatially relative terms, such as “beneath”, “below”, “lower”, “under”,“above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. It will beunderstood that the spatially relative terms are intended to encompassdifferent orientations of the device in use or in operation, in additionto the orientation depicted in the figures. For example, if the devicein the figures is turned over, elements described as “below” or“beneath” or “under” other elements or features would then be oriented“above” the other elements or features. Thus, the example terms “below”and “under” can encompass both an orientation of above and below. Thedevice may be otherwise oriented (e.g., rotated 90 degrees or at otherorientations) and the spatially relative descriptors used herein shouldbe interpreted accordingly. In addition, it will also be understood thatwhen a layer is referred to as being “between” two layers, it can be theonly layer between the two layers, or one or more intervening layers mayalso be present.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the inventiveconcept. As used herein, the singular forms “a”, “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises” and/or “comprising,” when used in this specification,specify the presence of stated features, integers, steps, operations,elements, and/or components, but do not preclude the presence oraddition of one or more other features, integers, steps, operations,elements, components, and/or groups thereof. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list. Further, the use of“may” when describing embodiments of the inventive concept refers to“one or more embodiments of the inventive concept.”

It will be understood that when an element or layer is referred to asbeing “on”, “connected to”, “coupled to”, or “adjacent to” anotherelement or layer, it can be directly on, connected to, coupled to, oradjacent to the other element or layer, or one or more interveningelements or layers may be present. In contrast, when an element or layeris referred to as being “directly on,” “directly connected to”,“directly coupled to”, or “immediately adjacent to” another element orlayer, there are no intervening elements or layers present.

As used herein, the term “substantially,” “about,” and similar terms areused as terms of approximation and not as terms of degree, and areintended to account for the inherent deviations in measured orcalculated values that would be recognized by those of ordinary skill inthe art.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which the present disclosure belongs. Itwill be further understood that terms, such as those defined in commonlyused dictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and/orthe present specification, and should not be interpreted in an idealizedor overly formal sense, unless expressly so defined herein.

FIG. 1 is a diagram for describing a substrate according to anembodiment of the disclosure, and FIG. 2 is a diagram for describing adisplay device according to an embodiment of the disclosure.

In the following embodiments, a plane may define a position in a firstdirection DR1 and a second direction DR2, and a height may define aposition in a third direction DR3 (refer to FIG. 5). The first directionDR1, the second direction DR2, and the third direction DR3 may bedirections orthogonal to each other.

The substrate SUB may include a display area DA, a non-display area NDA,a first additional area ADA1, and a second additional area ADA2.

The display area DA may have a quadrangle shape (e.g., a rectangularshape). Each corner of the display area DA may be angular or curved. Inaddition, in a case of a circular display, the display area DA may havea circular shape (e.g., a perfect circle or an ellipse). In addition,the display area DA may be another shape such as a polygon other than aquadrangle, an ellipse, or the like. As described above, a shape of thedisplay area DA may be set differently depending on a product.

Pixels may be positioned on the display area DA. Each pixel may includea light emitting diode or may include a liquid crystal layer accordingto a type of a display device DP.

The non-display area NDA may surround an outer periphery of the displayarea DA. For example, the non-display area NDA may have a rectangularshape. Each corner of the non-display area NDA may be angular or curved.FIG. 2 shows a case where each corner of the non-display area NDA has acurved shape. The non-display area NDA may have a circular shape.Because minimizing or reducing the non-display area NDA is advantageousto produce a narrow bezel structure, a shape of the non-display area NDAmay be like the shape of the display area DA.

The first additional area ADA1 may be positioned between the non-displayarea NDA and the second additional area ADA2. The first additional areaADA1 may be connected to the non-display area NDA at a first boundaryED1. The first additional area ADA1 may be connected to the secondadditional area ADA2 at a second boundary ED2. Each of the firstboundary ED1 and the second boundary ED2 may extend in the firstdirection DR1.

A width of the first additional area ADA1 may be narrower or decreasefrom the first boundary ED1 to the second boundary ED2. That is, thewidth of the first additional area ADA1 in the first direction DR1 maybe narrower or decrease toward the second direction DR2. Therefore, thefirst additional area ADA1 may include a curved first side RC1 and acurved second side RC2. The sides RC1 and RC2 may be convex toward aninside of the substrate (e.g., a center of the substrate).

FIG. 2 shows that the first additional area ADA1 includes the two sides(e.g., two opposing sides) RC1 and RC2 in the first direction DR1 and adirection opposite to the first direction DR1. In other words, the firstside RC1 and the second side RC2 are oppositely aligned and define aleft side and a right side of the first additional area ADA1. In anembodiment, a boundary positioned in the first direction DR1 maycoincide with a boundary of the non-display area NDA, and thus the firstadditional area ADA1 may include only the first side RC1. In anembodiment, a boundary positioned in the direction opposite to the firstdirection DR1 may coincide with the boundary of the non-display areaNDA, and thus the first additional area ADA1 may include only the secondside RC2.

The second additional area ADA2 may have a rectangular shape. Eachcorner positioned in the second direction DR2 of the second additionalarea ADA2 may be angular or curved. FIG. 2 is an example embodimentwhere each corner positioned in the second direction DR2 of the secondadditional area ADA2 is angular.

An encapsulation film TFE may be positioned on the pixels. For example,the encapsulation film TFE may cover the pixels in the display area DA,and a boundary of the encapsulation film TFE may be positioned in thenon-display area NDA. The encapsulation film TFE may cover lightemitting elements and the circuit elements of the pixels of the displayarea DA to prevent or reduce exposure to external moisture and/orprevent or substantially prevent breakage from an impact.

Sensing electrodes SC1 and SC2 may be positioned on the encapsulationfilm TFE. The sensing electrodes SC1 and SC2 may sense a user's touch,hovering, gesture, proximity, and the like. The sensing electrodes SC1and SC2 may be configured in different shapes according to variousmethods such as a resistive type (or method), a capacitive type (ormethod), an electro-magnetic type (or method), and/or an optical type(or method). For example, when the sensing electrodes SC1 and SC2 areconfigured as the capacitive type, the sensing electrodes SC1 and SC2may be configured as a self-capacitive type, a mutual-capacitive type,or the like.

When the sensing electrodes SC1 and SC2 are configured as theself-capacitive type, each of the sensing electrodes SC1 and SC2 may beindependently driven, sensing signals corresponding to capacitancesformed by the each of the sensing electrodes SC1 and SC2 and the body ofthe user may be provided to corresponding sensing wires IST1 and IST2.

When the sensing electrodes SC1 and SC2 are configured as themutual-capacitive type, a driving signal may be transmitted through asensing wire corresponding to the first sensing electrode SC1, and asensing signal may be received through a sensing wire corresponding tothe second sensing electrode SC2 forming a mutual capacitance with thefirst sensing electrode SC1. When a user is in a sufficiently closeproximity to the sensing electrodes, the mutual capacitance between thefirst sensing electrode SC1 and the second sensing electrode SC2changes, and thus the touch of the user may be detected based on adifference of the sensing signal according to the change in the mutualcapacitance. In an embodiment, a driving signal may be transmittedthrough the sensing wire corresponding to the second sensing electrodeSC2, and a sensing signal may be received through a sensing wirecorresponding to the first sensing electrode SC1 for forming a mutualcapacitance with the second sensing electrode SC2.

Pads PDE1, PDE2, and PDE3 may be positioned on the second additionalarea ADA2. The pads PDE1 and PDE3 may be connected to the sensingelectrodes SC1 and SC2 positioned above the encapsulation film throughthe sensing wires IST1 and IST2. The pads PDE1 and PDE3 may be connectedto an external touch integrated chip (“IC”). In addition, the pads PDE2may be connected to the pixels positioned under the encapsulation filmTFE or a driver of the pixels through display wires DST. The driver mayinclude a scan driver, a light emitting driver, a data driver, and thelike. The driver may be positioned under the encapsulation film TFE ormay be positioned in an external display IC connected through the padsPDE2.

When the display device DP includes mutual capacitive sensing, a touchIC may transmit the driving signal through the first sensing wire IST1and receive the sensing signal through the second sensing wire IST2. Inan embodiment, the driving signal may be transmitted through the secondsensing wire IST2 and the sensing signal may be received through thefirst sensing wire IST1. When the display device DP includesself-capacitance sensors, a driving method of the first sensing wireIST1 and the second sensing wire IST2 may be the same. The display wiresDST may include a control line, a data line, a power line, and the like,and may provide signals so that the pixels may display an image. Thesignals may be provided from the driver connected to the display wiresDL.

FIG. 1 shows a state in which the substrate SUB is bent, and FIG. 2shows a state in which the substrate SUB is not bent. The display deviceDP may be bent as shown in FIG. 1 after elements are stacked on thesubstrate SUB in a state in which the display device DP is not bent asshown in FIG. 2.

The substrate SUB may include a first bending area BA1 extending fromthe first side RC1 of the first additional area ADA1 to overlap thenon-display area NDA. Additionally, the first bending area BA1 may beextended to overlap the display area DA. That is, each of the displayarea DA, the non-display area NDA, and the first additional area ADA1may partially overlap the first bending area BA1. The first bending areaBA1 may have a width in the first direction DR1 and a length extendingin the second direction DR2. A first bending axis BX1 may be defined asa folding line extending in the second direction DR2 through a center ofthe first bending area BA1. According to an embodiment, the firstbending area BA1 may be a portion where a stress is reduced due toremoval of a portion of an insulating film or the like. Therefore, thefirst bending area BA1 may have a portion of the insulating film or thelike removed unlike other portions around the first bending area BA1.According to an embodiment, the first bending area BA1 may have the sameconfiguration as the other portions around the first bending area BA1.In other words, the first bending area BA1 may not have a portion of theinsulating film removed.

The substrate SUB may include a third bending area BA3 extending fromthe second side RC2 of the first additional area ADA1 to overlap thenon-display area NDA. Additionally, the third bending area BA3 may beextended to overlap the display area DA. That is, each of the displayarea DA, the non-display area NDA, and the first additional area ADA1may partially overlap the third bending area BA3. The third bending areaBA3 may have a width in the first direction DR1 and a length extendingin the second direction DR2. A third bending axis BX3 may be defined asa folding line extending in the second direction DR2 through a center ofthe third bending area BA3. According to an embodiment, the thirdbending area BA3 may be a portion where the stress is reduced by removalof a portion of the insulating film or the like. Therefore, the thirdbending area BA3 may have a portion of the insulating film or the likeremoved in contrast to other portions around the third bending area BA3.According to an embodiment, the third bending area BA3 may have the sameconfiguration as the other portions around the third bending area BA3.In other words, the third bending area BA3 may not have a portion of theinsulating film removed.

The second additional area ADA2 may include a second bending area BA2.The second bending area BA2 may have a width in the second direction DR2and a length extending in the first direction DR1. A second bending axisBX2 may be defined as a folding line extending in the first directionDR1 through a center of the second bending area BA2. According to anembodiment, the second bending area BA2 may be a portion where thestress is reduced due to removal of a portion of the insulating film orthe like. Therefore, the second bending area BA2 may have a portion ofthe insulating film or the like removed in contrast to other portionsaround the second bending area BA2. According to an embodiment, thesecond bending area BA2 may have the same configuration as the otherportions around the second bending area BA2. In other words, the secondbending area BA2 may not have a portion of the insulating film removed.

In one or more embodiments, the first to third bending areas BA1, BA2,and BA3 do not overlap with each other.

Here, the term “folded” is intended to refer to a shape that is notfixed and may be modified from its original form to another form, andmay refer to being folded, curved, or rolled along one or more bendingaxes. A side bezel width of the first direction DR1 and the directionopposite to the first direction DR1 of the display device DP may bereduced by the first and third bending areas BA1 and BA3. In addition, aside bezel width of the second direction DR2 of the display device DPmay be reduced by the second bending area BA2.

FIG. 3 is an enlarged view of a portion of the first additional areaADA1 of FIG. 2, and FIG. 4 is a diagram for describing an effect ofincreasing a separation distance of a second sensing insulating filmfrom the first side RC1.

Specifically, FIG. 3 shows an enlarged view of the non-display area NDA,the first additional area ADA1, and the second additional area ADA2 inthe vicinity of the first side RC1. However, in one or more embodiments,the description of the embodiment in FIG. 3 may be applied to the secondside RC2 as well as the first side RC1.

A first sensing insulating film ISI1 may be positioned on theencapsulation film TFE. The first sensing insulating film ISI1 may coverat least some of the sensing electrodes SC1 and SC2, the sensing wiresIST1 and IST2, and bridge electrodes CP1 and CP2 (refer to FIGS. 18 and19).

A second sensing insulating film ISI2 may be positioned on the firstsensing insulating film ISI1, the sensing electrodes SC1 and SC2, andthe sensing wires IST1 and IST2. The second sensing insulating film ISI2may cover the sensing electrodes SC1 and SC2 and the sensing wires IST1and IST2 in the display area DA, the non-display area NDA, and the firstadditional area ADA1. According to an embodiment, the second sensinginsulating film ISI2 may additionally cover the sensing wires IST1 andIST2 in the second additional area ADA2.

According to an embodiment, the second sensing insulating film ISI2 maycover at least a portion of a second wire protective film LPL2. Thesecond wire protective film LPL2 may cover the sensing wires IST1 andIST2 and the display wires DST passing through the second bending areaBA2.

The first side RC1 may be curved with a radius of curvature CR. As theradius of curvature CR increases, a space where the sensing wires IST1and IST2 or the display wires DST are to be disposed decreases and maybe insufficient. Therefore, reducing the radius of curvature CR may bedesirable to fit the sensing wires IST1 and IST2 or the display wiresDST. However, a stress applied to the first bending area BA1 increasesas the radius of curvature CR is smaller or reduced. In this case, acrack may occur in the second sensing insulating film ISI2.

The first additional area ADA1 may be referred to as a stress relaxationarea. As the radius of curvature CR is large, the length of the firstadditional area ADA1 in the second direction DR2 may be increased, andthe width of the first additional area ADA1 in the first direction DR1may be reduced. In this case, as described above, the stress applied tothe first bending area BA1 may be reduced, but the space where the wiresIST1, IST2, and DST to be disposed may be insufficient. On the otherhand, as the radius of curvature CR decreases, the length of the firstadditional area ADA1 in the second direction DR2 may be reduced, and thewidth of the first additional area ADA1 in the first direction DR1 maybe increased. In this case, as described above, the stress applied tothe first bending area BA1 may be increased, but the available spacewhere the wires IST1, IST2, and DST are to be disposed increases.

Referring to FIG. 4, it may be seen that as a distance from the firstside RC1 increases, a stress applied to the first sensing insulatingfilm ISI1, and the second sensing insulating film ISI2 is reduced.

The first sensing insulating film ISI1 may be configured of an inorganicfilm, and a crack may occur when a stress of 500 MPa or more is applied.As it can be seen from FIG. 4, even though the first side RC1 is closeto the first sensing insulating film ISI1, a possibility that a crackoccurs in the first sensing insulating film ISI1 is low because thestress applied to the first sensing insulating film ISI1 is about 43MPa.

The second sensing insulating film ISI2 may be configured of an organicfilm, and a crack may occur when a stress of 6 MPa or more is applied.When the second sensing insulating film ISI2 is close to the first sideRC1, a possibility that a crack occurs in the second sensing insulatingfilm ISI2 is high because a stress of about 5.5 MPa may occur in thesecond sensing insulating film ISI2.

Therefore, it is desirable for the second sensing insulating film ISI2to be sufficiently spaced apart from the first side RC1. According to anexperiment result, it was confirmed that when the boundary of the secondsensing insulating film ISI2 is spaced apart from the first side RC1 by200 μm or more, a possibility that a crack occurs in the second sensinginsulating film ISI2 is significantly reduced.

Therefore, when the boundary of the second sensing insulating film ISI2is sufficiently spaced apart from the first side RC1, the stress appliedto the second sensing insulating film ISI2 may be reduced, and thusthere is an advantage in that the radius of curvature CR of the firstside RC1 may be further reduced without undesirably increasing thepossibility that a crack occurs in the second sensing insulating filmISI2.

In an embodiment, at least some boundary of the first sensing insulatingfilm ISI1 may be closer to the first side RC1 than at least someboundary of the second sensing insulating film ISI2. That is, a firstdistance DI1 between the at least some boundary of the first sensinginsulating film ISI1 and the first side RC1 may be less than a seconddistance DI2 between the at least some boundary of the second sensinginsulating film ISI2 and the first side RC1. For example, the firstdistance DI1 and the second distance DI2 may be distances on the firstbending axis BX1.

According to such an embodiment, the at least some boundary of the firstsensing insulating film ISI1 may not be covered by the second sensinginsulating film ISI2. For example, the at least some boundary of thefirst sensing insulating film ISI1 may be exposed by the second sensinginsulating film ISI2. That is, in the vicinity of the first side RC1, anon-covered area (“NCA”) may exist in the first sensing insulating filmISI1.

The at least some boundary of the first sensing insulating film ISI1 andthe at least some boundary of the second sensing insulating film ISI2described above may be positioned on the first bending area BA1.

FIG. 5 is an embodiment of a cross section taken along a line I-I′ ofFIG. 2. It is assumed that the line I-I′ of FIG. 2 passes through thefirst pad PDE1 and the first sensing wire IST1.

First, the display area DA will be described.

In an embodiment of the disclosure, pixels PX are provided in thedisplay area DA. Each pixel PX may include a transistor connected to acorresponding wire of the display wires DST, a light emitting elementconnected to the transistor, and a capacitor Cst. In FIG. 5, forconvenience of description, one transistor, one light emitting element,and one capacitor Cst are shown for one pixel PX as an example.

The substrate SUB may be formed of an insulating material such as glassand/or resin. In addition, the substrate SUB may be formed of a materialhaving flexibility so as to be bent or folded, and may have asingle-layer structure or a multilayer structure.

For example, the substrate SUB may include at least one of polystyrene,polyvinyl alcohol, polymethyl methacrylate, polyethersulfone,polyacrylate, polyetherimide, polyethylene naphthalate, polyethyleneterephthalate, polyphenylene sulfide, polyarylate, polyimide,polycarbonate, triacetate cellulose, and cellulose acetate propionate.However, the material configuring the substrate SUB may be variouslychanged, and may be formed of fiber reinforced plastic (“FRP”) or thelike.

For example, when the substrate SUB has a multilayer structure,inorganic material(s) such as silicon nitride, silicon oxide, and/orsilicon oxynitride may be interposed between a plurality of layers as asingle-layer or as a plurality of layers.

A buffer film BF may cover the substrate SUB. The buffer film BF maysubstantially prevent or prevent an impurity from diffusing into achannel CH of the transistor. The buffer film BF may be an inorganicinsulating film formed of an inorganic material. For example, the bufferfilm BF may be formed of silicon nitride, silicon oxide, siliconoxynitride and/or the like, and in one or more embodiments, the bufferfilm BF may be omitted depending on the material of the substrate SUBand a process condition. According to an embodiment, a barrier layer mayfurther be provided.

An active film ACT may be positioned on the buffer film BF. The activefilm ACT may be patterned to configure the channel, a source electrode,and a drain electrode of the transistor, or to configure a wire. Theactive film ACT may be formed of a semiconductor material. The activefilm ACT may be a semiconductor pattern formed of polysilicon, amorphoussilicon, oxide semiconductor, or the like. The channel of the transistoris a semiconductor pattern which is not doped with an impurity, and maybe an intrinsic semiconductor. The source electrode, the drainelectrode, and the wire may be a semiconductor pattern doped with animpurity. An impurity such as an n-type impurity (e.g., impurity used toprovide n-type doping), a p-type impurity (e.g., impurity used toprovide p-type doping), and/or other metals may be used.

The first gate insulating film GI1 may cover the active film ACT. Thefirst gate insulating film GI1 may be an inorganic insulating filmformed of an inorganic material. As the inorganic material, an inorganicinsulating material such as polysiloxane, silicon nitride, siliconoxide, or silicon oxynitride may be used.

A gate electrode GE of the transistor and a lower electrode LE of thecapacitor Cst may be positioned on the first gate insulating film GI1.The gate electrode GE may overlap an area corresponding to the channelCH.

The gate electrode GE and the lower electrode LE may be formed of ametal. For example, the gate electrode GE may be formed of at least oneof a metal such as gold (Au), silver (Ag), aluminum (Al), molybdenum(Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium, or copper(Cu), and/or an alloy of metals. In addition, the gate electrode GE maybe formed of a single film, but is not limited thereto, and may beformed of multiple films in which two or more materials of metals and/oralloys are stacked.

A second gate insulating film GI2 may cover the gate electrode GE andthe lower electrode LE. The second gate insulating film GI2 may be aninorganic insulating film formed of an inorganic material. As theinorganic material, polysiloxane, silicon nitride, silicon oxide,silicon oxynitride, and/or the like may be used.

An upper electrode UE of the capacitor Cst maybe positioned on thesecond gate insulating film GI2. The upper electrode UE of the capacitorCst may be formed of a metal. For example, the upper electrode UE may beformed of at least one of a metal such as gold (Au), silver (Ag),aluminum (AI), molybdenum (Mo), chromium (Cr), titanium (Ti), nickel(Ni), neodymium, or copper (Cu), and/or an alloy of metals. In addition,the upper electrode UE may be formed of a single film, but not limitedthereto, and may be formed of multiple films in which two or morematerials of metals and/or alloys are stacked.

The lower electrode LE and the upper electrode UE may form the capacitorCst with the second gate insulating film GI2 interposed therebetween. InFIG. 5, the capacitor Cst is shown as a two layer electrode structure ofthe lower electrode LE and the upper electrode UE. However, in one ormore embodiments, the capacitor Cst may be configured as a three layerelectrode structure using the active film ACT or a three layer electrodestructure using an electrode of the same layer as a first connectionpattern CNP1, or an electrode structure of four or more layers.

An interlayer insulating film ILD may cover the upper electrode UE. Theinterlayer insulating film ILD may be an inorganic insulating filmformed of an inorganic material. As the inorganic material,polysiloxane, silicon nitride, silicon oxide, silicon oxynitride, and/orthe like may be used.

In the present embodiment, for convenience of description, the firstgate insulating film GI1, the second gate insulating film GI2, and theinterlayer insulating film ILD may be referred to as a first insulatingfilm group ING1. The first insulating film group ING1 may cover aportion of the transistor. According to an embodiment, the firstinsulating film group ING1 may further include the buffer film BF.

The first connection pattern CNP1 may be positioned on the interlayerinsulating film ILD. The first connection pattern CNP1 may be in contactwith each of a source electrode and a drain electrode of the active filmACT through a contact hole formed through the interlayer insulating filmILD, the second gate insulating film GI2, and the first gate insulatingfilm GI1.

The first connection pattern CNP1 may be formed of a metal. For example,the source electrode SE and the drain electrode DE may be formed of atleast one of a metal such as gold (Au), silver (Ag), aluminum (AI),molybdenum (Mo), chromium (Cr), titanium (Ti), nickel (Ni), neodymium,copper (Cu), and/or an alloy of metals.

According to an embodiment, a passivation film may cover the firstconnection pattern CNP1. The passivation film may be an inorganicinsulating film formed of an inorganic material. An inorganic materialsuch as polysiloxane, silicon nitride, silicon oxide, siliconoxynitride, and/or the like may be used for the passivation film.

The first via film VIA1 may cover the passivation film or thetransistor. The first via film VIA1 may be an organic insulating filmformed of an organic material. As the organic material, an organicinsulating material such as a polyacrylic compound, a polyimidecompound, a fluorocarbon compound such as Teflon, and/or abenzocyclobutene compound may be used. The organic film may be depositedby a method such as evaporation.

The second connection pattern CNP2 maybe connected to the firstconnection pattern CNP1 through an opening portion of the first via filmVIA1. The second connection pattern CNP2 may be formed of a metal suchas gold (Au), silver (Ag), aluminum (AI), molybdenum (Mo), chromium(Cr), titanium (Ti), nickel (Ni), neodymium, copper (Cu), and/or analloy of metals.

The second via film VIA2 may cover the first via film VIA1 and thesecond connection pattern CNP2. The second via film VIA2 may be anorganic insulating film formed of an organic material. As the organicmaterial, an organic insulating material such as a polyacrylic compound,a polyimide compound, a fluorocarbon compound such as Teflon, and/or abenzocyclobutene compound may be used.

A first light emitting element electrode LDE1 may be connected to thesecond connection pattern CNP2 through an opening portion of the secondvia film VIA2. Here, the first light emitting element electrode LDE1 maybe an anode of the light emitting element according to an embodiment.

According to an embodiment, a configuration of the second via film VIA2and the second connection pattern CNP2 may be omitted and the firstlight emitting element electrode LDE1 may be directly connected to thefirst connection pattern CNP1 through the opening portion of the firstvia film VIA1.

The first light emitting element electrode LDE1 may be formed of a metalfilm such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, an alloy thereof,indium tin oxide (“ITO”), indium zinc oxide (“IZO”), zinc oxide (“ZnO”),indium tin zinc oxide (“ITZO”), and/or the like. The first lightemitting element electrode LDE1 may be formed of one kind of metal, butis not limited thereto, and may be formed of two or more kinds ofmetals, for example, an alloy of Ag and Mg.

The first light emitting element electrode LDE1 may be formed of atransparent conductive film when an image is to be provided in adownward direction of the substrate SUB, and the first light emittingelement electrode LDE1 may be formed of a metal reflective film and/or atransparent conductive film when an image is to be provided in an upwarddirection of the substrate SUB.

A pixel definition layer PDL for partitioning a light emitting area ofeach pixel PX is provided on the substrate SUB on which the first lightemitting element electrode LDE1 and the like are formed. The pixeldefinition layer PDL may be an organic insulating layer formed of anorganic material. An organic insulating material such as a polyacryliccompound, a polyimide compound, a fluorocarbon compound such as Teflon,or a benzocyclobutene compound may be used for the pixel definitionlayer PDL.

The pixel definition layer PDL may expose an upper surface of the firstlight emitting element electrode LDE1 and may be protruded from thesubstrate SUB along a periphery of the pixel PX. A light emitting filmEML may be provided in an area of the pixel PX surrounded by the pixeldefinition film PDL.

The light emitting film EML may include a low molecular material or ahigh molecular material. Examples of the low molecular material mayinclude copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl)-N,N′-diphenyl-benzidine (N, N′-Di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB), tris-8-hydroxyquinoline aluminum (Alq3),and the like. These materials may be formed by a vacuum depositionmethod. Examples of the high molecular material may include PEDOT,poly-phenylenevinylene (“PPV”), polyfluorene, and the like.

The light emitting film EML may be provided as a single-layer, but maybe provided as multiple layers including various functional layers. Whenthe light emitting film EML is multiple layers, the light emitting filmEML may have a structure in which a hole injection layer (“HIL”), a holetransport layer (“HTL”), an emission layer (“EML”), an electrontransport layer (“ETL”), an electron injection layer (“EIL”), and thelike are stacked in a single or composite structure. The light emittingfilm EML may be formed by a screen printing method, an inkjet printingmethod, a laser induced thermal imaging (“LITI”) method, or the like.

According to an embodiment, at least a portion of the light emittingfilm EML may be integrally formed over a plurality of first lightemitting element electrodes LDE1, and may also be individually providedto correspond to the plurality of first light emitting elementelectrodes LDE1, respectively.

A second light emitting element electrode LDE2 may be provided on thelight emitting film EML. The second light emitting element electrodeLDE2 may be provided for each pixel PX, but may be provided to covermost of the display area DA and may be shared by the plurality of pixelsPX.

The second light emitting element electrode LDE2 may be used as acathode or an anode according to an embodiment. When the first lightemitting element electrode LDE1 is an anode, the second light emittingelement electrode LDE2 may be used as a cathode. When the first lightemitting element electrode LDE1 is a cathode, the second light emittingelement electrode LDE2 may be used as an anode.

The second light emitting element electrode LDE2 may be formed of ametal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir or Cr, atransparent conductive film such as indium tin oxide (“ITO”), indiumzinc oxide (“IZO”), zinc oxide (“ZnO”), indium tin zinc oxide (“ITZO”),and/or the like. In an embodiment of the disclosure, the second lightemitting element electrode LDE2 may be formed of multiple films of twoor more films including a metal thin film, and for example, the secondlight emitting element electrode LDE2 may be formed of a triple film ofITO/Ag/ITO.

The second light emitting element electrode LDE2 may be formed of ametal reflective film and/or a transparent conductive film when an imageis to be provided in a downward direction of the substrate SUB, and thesecond light emitting element electrode LDE2 may be formed of atransparent conductive film when an image is to be provided in an upwarddirection of the substrate SUB.

A set of the first light emitting element electrode LDE1, the lightemitting film EML, and the second light emitting element electrode LDE2may be referred to as a light emitting element.

The encapsulation film TFE may be provided on the second light emittingelement electrode LDE2. The encapsulation film TFE may be formed of asingle-layer, but may also be formed of multiple layers. In the presentembodiment, the encapsulation film TFE may include first to thirdencapsulation films ENC1, ENC2, and ENC3. The first to thirdencapsulation films ENC1, ENC2 and ENC3 may be formed of an organicmaterial and/or an inorganic material. The third encapsulation film ENC3positioned at an outermost periphery may be formed of an inorganicmaterial. For example, the first encapsulation film ENC1 may be aninorganic film configured of an inorganic material, the secondencapsulation film ENC2 may be an organic film configured of an organicmaterial, and the third encapsulation film ENC3 may be an inorganic filmconfigured of an inorganic material. Penetration of moisture or oxygeninto the inorganic material is less than that of the organic material.However, the inorganic material is vulnerable to cracks becauseelasticity or flexibility of the inorganic material may be low.Propagation of a crack may be prevented or reduced by forming the firstencapsulation film ENC1 and the third encapsulation film ENC3 with theinorganic material and forming the second encapsulation film ENC2 withthe organic material. Here, a layer formed of the organic material, thatis, the second encapsulation film ENC2, may be completely covered by thethird encapsulation film ENC3 so that an end portion is not exposed tothe outside. As the organic material, an organic insulating materialsuch as a polyacrylic compound, a polyimide compound, a fluorocarboncompound such as Teflon, and/or a benzocyclobutene compound may be used.As the inorganic material, polysiloxane, silicon nitride, silicon oxide,silicon oxynitride, or the like may be used.

The light emitting film EML forming the light emitting element may beeasily damaged by moisture or oxygen from the outside. The encapsulationfilm TFE protects the light emitting elements by covering the lightemitting film EML. The encapsulation film TFE covers the display area DAand may extend to the non-display area NDA outside the display area DA.However, in a case of insulating films formed of an organic material,there is an advantage in terms of flexibility and elasticity, butmoisture and oxygen may more easily penetrate an insulating film formedof an organic material than an insulating film formed of an inorganicmaterial. In an embodiment of the disclosure, in order to prevent or toreduce penetration of moisture or oxygen through insulating films formedof an organic material, the end portion of the insulating films formedof the organic material may be covered by insulating films formed of aninorganic material so as not to be exposed to the outside. For example,the first via film VIA1, the second via film VIA2, and the pixeldefinition film PDL, which are formed of an organic material, do notextend continuously to the non-display area NDA, and may be covered bythe first encapsulation film ENC1. Therefore, an upper surface of thepixel definition layer PDL and sides of the first via film VIA1, thesecond via film VIA2, and the pixel definition film PDL may besubstantially prevented or prevented from being exposed to the outsideby being sealed by encapsulation film TFE including the inorganicmaterial.

However, whether the encapsulation film TFE is formed of a plurality oflayers or a material of the encapsulation film TFE is not limitedthereto, and may be variously changed. For example, the encapsulationfilm TFE may include a plurality of organic material and a plurality ofinorganic material layers which are alternately stacked.

A first sensing electrode layer ISM1 may be positioned on theencapsulation film TFE. According to an embodiment, an additional bufferfilm may be positioned between the first sensing electrode layer ISM1and the encapsulation film TFE. The first sensing electrode layer ISM1may be formed of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Iror Cr, a transparent conductive film such as indium tin oxide (“ITO”),indium zinc oxide (“IZO”), zinc oxide (“ZnO”), indium tin zinc oxide(“ITZO”), and/or the like.

The first sensing insulating film ISI1 may be present on the firstsensing electrode layer ISM1. The first sensing insulating film ISI1 maybe an inorganic insulating film formed of an inorganic material. Aninorganic insulating material such as polysiloxane, silicon nitride,silicon oxide, silicon oxynitride, and the like may be used for thefirst sensing insulating film ISI1.

A second sensing electrode layer ISM2 may be present on the firstsensing insulating film ISI1. The second sensing electrode layer ISM2may be formed of a metal film such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd,Ir, Cr, a transparent conductive film (such as indium tin oxide (“ITO”),indium zinc oxide (“IZO”), zinc oxide (“ZnO”), or indium tin zinc oxide(“ITZO”)), and/or the like.

A configuration of various input sensors using the first sensingelectrode layer ISM1, the first sensing insulating film ISI1, and thesecond sensing electrode layer ISM2 will be described later withreference to FIGS. 17-19.

In the embodiment of FIG. 5, the second sensing electrode layer ISM2 maybe patterned to form a first pattern IST1 a of the first sensing wireIST1.

The second sensing insulating film ISI2 may be positioned on the secondsensing electrode layer ISM2. The second sensing insulating film ISI2may be configured of an organic film. For example, as the organicinsulating material, an organic insulating material such as apolyacrylic compound, a polyimide compound, a fluorocarbon compound suchas Teflon, or a benzocyclobutene compound may be used. For example, thesecond sensing insulating film ISI2 may be configured of polymethylmethacrylate, polydimethylsiloxane, polyimide, acrylate, polyethyleneterephthalate, polyethylene naphthalate, and/or the like.

Next, the non-display area NDA, the first additional area ADA1, and thesecond additional area ADA2 will be described. Because distinctionbetween the non-display area NDA and the first additional area ADA1 isnot a characteristic in the cross-sectional view of FIG. 5, thenon-display area NDA and the first additional area ADA1 are notseparately described. Hereinafter, in describing the non-display areaNDA and the second additional area ADA2, description thereof will beomitted or briefly described in order to avoid repetition ofdescription.

The dam DAM may be positioned at a boundary of the second encapsulationfilm ENC2. For example, the dam DAM may be positioned between aplanarization film FLT and the second encapsulation film ENC2. The damDAM may be a multilayer structure and may include, for example, a firstdam DAM1 and a second dam DAM2. For example, the first and second damsDAM1 and DAM2 may be formed of an organic material. The first and seconddams DAM1 and DAM2 may correspond to any one of the first via film VIA1,the second via film VIA2, and the pixel definition film PDL. Forexample, when the first dam DAM1 is configured of the same materialthrough the same process as the first via film VIA1, the second dam DAM2may be configured of the same material through the same process as thesecond via film VIA2 or the pixel definition film PDL. In anotherexample, when the first dam DAM1 is configured of the same materialthrough the same process as the second via film VIA2, the second damDAM2 may be configured of the same material through the same process asthe pixel definition film. In addition, when a spacer is formed on thepixel definition layer PDL of the display area DA, the dam DAM may alsobe configured using the same material as the spacer.

The dam DAM substantially prevents or prevents the organic material ofthe second encapsulation film ENC2 of which fluidity is high fromoverflowing to the outside of the dam DAM during a process (e.g.,formation process). The first and third encapsulation films ENC1 andENC3 configured of the inorganic material may cover the dam DAM andextend, and thus adhesion to the substrate SUB or other films on thesubstrate SUB may be increased.

The first pad PDE1 may be positioned on the substrate SUB, and may bespaced apart from the planarization film FLT. The first pad PDE1 may besupported by a second insulating layer group ING2. Insulating films ofthe second insulating film group ING2 may correspond to the insulatingfilms of the first insulating film group ING1. The first pad PDE1 mayinclude a first pad electrode PDE1 a and a second pad electrode PDE1 b.The first pad electrode PDE1 a may be configured of the same material asthe first connection pattern CNP1. The second pad electrode PDE1 b maybe configured of the same material as the second connection patternCNP2.

The planarization film FLT may be positioned on the substrate SUB, andmay be spaced apart from the area covered by the encapsulation film TFE.The planarization film FLT may be an organic insulating film formed ofan organic material. An organic insulating material (such as apolyacrylic compound, a polyimide compound, a fluorocarbon compound suchas Teflon, a benzocyclobutene compound, and/or the like) may be used forthe planarization film FLT.

In the present embodiment, the planarization film FLT may be formedbefore the formation of the first connection pattern CNP1 after theformation of the interlayer insulating film ILD. Therefore, theplanarization film FLT and the first via film VIA1 may be formed throughdifferent processes. According to an embodiment, the planarization filmFLT and the first via film VIA1 may include different organic materials.

One end of the planarization film FLT may cover the first insulatingfilm group ING1. In addition, a portion of the planarization film FLTcorresponding to the second bending area BA2 may fill a first trenchTCH1 between the first insulating film group ING1 and the secondinsulating film group ING2.

Because the inorganic insulating films have a higher rigidness and alower flexibility than the organic insulating film, a probability of acrack occurring is relatively high. When the crack occurs in theinorganic insulating films, the crack may propagate to wires on theinorganic insulating films, and result in a defect of a wire, adisconnection or the like.

Therefore, as shown in FIG. 5, the first trench TCH1 may be formed byremoving the inorganic insulating films from the second bending areaBA2, and the first insulating film group ING1 and the second insulatingfilm group ING2 may be distinguished. In the present embodiment, all ofthe inorganic insulating films corresponding to an area of the firsttrench TCH1 are removed, but in one or more embodiments, some inorganicinsulating films may be remained. In this case, the remaining inorganicinsulating films may include a slit to disperse a bending stress.

A second pattern IST1 b of the first sensing wire IST1 may extend on theplanarization film FLT and may be electrically connected to the firstpad PDE1. In the present embodiment, the second pattern IST1 b may beconfigured of the same material through the same process as the firstconnection pattern CNP1.

A first wire protective film LPL1 may cover the planarization film FLTand the second pattern IST1 b. In addition, a second wire protectivefilm LPL2 may cover the first wire protective film LPL1. According to anembodiment, a configuration of the second wire protective film LPL2 maybe omitted. The first and second wire protective films LPL1 and LPL2 maybe formed of an organic material. The first and second wire protectivefilms LPL1 and LPL2 may correspond to any one of the first via filmVIA1, the second via film VIA2, and the pixel definition film PDL. Forexample, when the first wire protective film LPL1 is configured of thesame material through the same process as the first via film VIA1, thesecond wire protective film LPL2 may be configured of the same materialthrough the same process as the second via film VIA2 or the pixeldefinition film PDL. In another example, when the first wire protectivefilm LPL1 is configured of the same material through the same process asthe second via film VIA2, the second wire protective film LPL2 may beconfigured of the same material through the same process as the pixeldefinition film PDL.

The first and second wire protective films LPL1 and LPL2 and the firstsensing insulating film ISI1 may include a first opening portion OPN1that exposes the second pattern IST1 b.

The first pattern IST1 a may be connected to the second pattern IST1 bthrough the first opening portion OPN1. According to the presentembodiment, a height of the second pattern IST1 b (e.g., a first portionof the second pattern IST1 b) positioned on one end of the firstinsulating film group ING1 and the planarization film FLT may be greaterthan a height of the second pattern IST1 b (e.g., a second portion ofthe second pattern IST1 b) positioned on the planarization film FLTcorresponding to the first trench TCH1.

Therefore, the first pattern IST1 a and the second pattern IST1 b may bedirectly connected with each other without another bridge wire. Becausea bridge wire is not present, connection reliability between the firstpattern IST1 a and the second pattern IST1 b is improved. In addition,because a length of the non-display area NDA may be reduced by thelength of the bridge wire, dead space is reduced, and a thin bezel ismore easily implemented.

A third pattern IST1 c of the first sensing wire IST1 may connect thefirst pad PDE1 and the second pattern ISTb with each other. The thirdpattern IST1 c may be formed of the same material through the sameprocess as the gate electrode GE of the transistor. According to anembodiment, the third pattern IST1 c may be formed of the same materialthrough the same process as the upper electrode UE. According to anembodiment, odd-numbered third pattern IST1 c may be formed of the samematerial through the same process as the gate electrode GE of thetransistor, and even-numbered third pattern IST1 c may be formed of thesame material through the same process as the upper electrode UE. In oneor more embodiments, the even-numbered third pattern IST1 c may beformed of the same material through the same process as the gateelectrode GE of the transistor and the odd-numbered third pattern IST1 cmay be formed of the same material through the same process as the upperelectrode UE. Therefore, a short circuit between adjacent wires may bemore efficiently prevented or the risk of a short circuit may bereduced.

The second insulating layer group ING2 may include a second openingportion OPN2 that exposes the third pattern IST1 c. In addition, theplanarization film FLT may include an opening portion corresponding tothe second opening portion OPN2. The second pattern IST1 b may beconnected to the third pattern IST1 c through the second opening portionOPN2.

FIGS. 6-8 are cross-sections taken along a line II-II′ of FIG. 2.

The line II-II′ of FIG. 2 may correspond to the first bending axis BX1.However, the same embodiment may be applied to the second side RC2 aswell as the first side RC1.

The display wires DST may be configured of a single-layer wire or amultilayer wire using at least one of the wires G1L, G2L, and SDL. Thewire G1L may be configured of the same material through the same processas the gate electrode GE. The wire G2L may be configured of the samematerial through the same process as the upper electrode UE. The wireSDL may be configured of the same material through the same process asthe first connection pattern CNP1.

The patterns IST1 a and IST12 a of the sensing wires IST1 and IST2 maybe positioned on the encapsulation film TFE and the first sensinginsulating film ISI1 (in the third direction DR3) and may be positionedbetween the dam DAM and the display area DA (in the second directionDR2). The first sensing insulating film ISI1 may be positioned betweenthe encapsulation film TFE and the sensing wires IST1 and IST2.

In the embodiment of FIG. 6, the second sensing insulating film ISI2covers the first sensing insulating film ISI1. Therefore, the non-coverarea NCA is not present in contrast to the embodiment shown in FIG. 3.

In this case, because a distance D21 from the first side RC1 is notsufficiently secured, a large stress may be applied to the secondsensing insulating film ISI2 at the time of bending the first bendingarea BA1, and a crack may occur in the second sensing insulating filmISI2.

In the embodiment of FIG. 7, a portion of the first sensing insulatingfilm ISI1 is not covered by the second sensing insulating film ISI2.Therefore, the non-cover area NCA is present similar to the embodimentof FIG. 3.

In this case, because a distance D22 from the first side RC1 issufficiently secured, the stress applied to the second sensinginsulating film ISI2 at the time of bending the first bending area BA1may be relatively small, and a crack may not occur in the sensinginsulating film ISI2.

In the embodiment of FIG. 7, at least some boundary of the secondsensing insulating film ISI2 may be closer to the first side RC1 thanthe dam DAM.

In the embodiment of FIG. 8, a portion of the first sensing insulatingfilm ISI1 is not covered by the second sensing insulating film ISI2.Therefore, the non-cover area NCA is present similar to the embodimentof FIG. 3.

In this case, because a distance D23 from the first side RC1 issufficiently secured, the stress applied to the second sensinginsulating film ISI2 at the time of bending the first bending area BA1may be smaller than that of FIG. 7, and a crack may not occur in thesecond sensing insulating film ISI2.

In the embodiment of FIG. 8, at least some boundary of the secondsensing insulating film ISI2 may be farther from the first side RC1 thanthe dam DAM. In addition, at least some boundary of the second sensinginsulating film ISI2 may be closer to the first side RC1 than thepatterns IST1 a and IST2 a of the sensing wires IST1 and IST2.Therefore, the second sensing insulating film ISI2 may cover thepatterns IST1 a and IST2 a of the sensing wires IST1 and IST2, and thusthe patterns IST1 a and IST2 a may be protected.

FIG. 9 is an embodiment of the cross-section taken along the line I-I′of FIG. 2.

In the embodiment of FIG. 9, in contrast to the embodiment of FIG. 5,the first sensing electrode layer ISM1 may be patterned to form a firstpattern IST1 a′ of the first sensing wire IST1.

The first and second wire protective films LPL1 and LPL2 may include afirst opening portion OPN1. In contrast to the embodiment of FIG. 5, thefirst sensing insulating film ISI1 does not include the first openingportion OPN1. The first pattern IST1 a′ may be connected to the secondpattern IST1 b through the first opening portion OPN1. The first sensinginsulating film ISI1 may cover the first pattern IST1 a′.

Description of other configurations redundant to those in FIG. 5 will beomitted.

FIGS. 10-12 are embodiments of the cross section taken along the lineII-II′ of FIG. 2.

The line II-II′ of FIG. 2 may correspond to the first bending axis BX1.However, the same embodiment may be applied to the second side RC2 aswell as the first side RC1.

The display wires DST may be configured of a single-layer wire or amultilayer wire using at least one of the wires G1L, G2L, and SDL. Thewire G1L may be configured of the same material through the same processas the gate electrode GE. The wire G2L may be configured of the samematerial through the same process as the upper electrode UE. The wireSDL may be configured of the same material through the same process asthe first connection pattern CNP1.

The patterns IST1 a′ and IST2 a′ of the sensing wires IST1 and IST2 maybe positioned between the encapsulation film TFE and the first sensinginsulating film ISI1 (in the third direction DR3) and may be positionedbetween the dam DAM and the display area DA (in the second directionDR2). The first sensing insulating film ISI1 may be positioned betweenthe sensing wires IST1 and IST2 and the second sensing insulating filmISI2.

In the embodiment of FIG. 10, the second sensing insulating film ISI2covers the first sensing insulating film ISI1. Therefore, the non-coverarea NCA is not present in contrast to the embodiment of FIG. 3.

In this case, because a distance D21′ from the first side RC1 is notsufficiently secured, a large stress may be applied to the secondsensing insulating film ISI2 at the time of bending the first bendingarea, and a crack may occur in the second sensing insulating film ISI2.

In the embodiment of FIG. 11, a portion of the first sensing insulatingfilm ISI1 is not covered by the second sensing insulating film ISI2.Therefore, the non-cover area NCA is present similar to the embodimentof FIG. 3.

In this case, because a distance D22′ from the first side RC1 issufficiently secured, the stress applied to the second sensinginsulating film ISI2 at the time of bending the first bending area BA1may be relatively small, and a crack may not occur in the second sensinginsulating film ISI2.

In the embodiment of FIG. 11, at least some boundary of the secondsensing insulating film ISI2 may be closer to the first side RC1 thanthe dam DAM.

In the embodiment of FIG. 12, a portion of the first sensing insulatingfilm ISI1 is not covered by the second sensing insulating film ISI2.Therefore, the non-cover area NCA is present similar to the embodimentof FIG. 3.

In this case, because a distance D23′ from the first side RC1 issufficiently secured, the stress applied to the second sensinginsulating film ISI2 at the time of bending the first bending area BA1may be smaller than that of FIG. 11, and a crack may not occur in thesecond sensing insulating film ISI2.

In the embodiment of FIG. 12, at least some boundary of the secondsensing insulating film ISI2 may be farther from the first side RC1 thanthe dam DAM. In addition, at least some boundary of the second sensinginsulating film ISI2 may be closer to the first side RC1 than thepatterns IST1 a′ and IST2 a′ of the sensing wires IST1 and IST2.Therefore, the second sensing insulating film ISI2 may cover thepatterns IST1 a′ and IST2 a′ of the sensing wires IST1 and IST2, andthus the patterns IST1 a′ and IST2 a′ may be protected.

FIGS. 13-16 are embodiments of the cross section taken along the lineI-I′ of FIG. 2.

Referring to FIG. 13, in comparison with FIG. 5, the first pattern IST1a of the first sensing wire IST1 is not directly connected to the secondpattern IST1 b.

The first sensing wire IST1 of the embodiment of FIG. 13 may furtherinclude a fourth pattern IST1 d and a fifth pattern IST1 e. The fourthpattern IST1 d may be formed of the same material through the sameprocess as the first connection pattern CNP1. The fifth pattern IST1 emay be formed of the same material through the same process as the gateelectrode GE.

The first pattern IST1 a may be connected to the fourth pattern IST1 dthrough an opening portion of the first sensing insulating film ISI1. Inaddition, the fourth pattern IST1 d may be connected to the fifthpattern IST1 e through opening portions of the interlayer insulatingfilm ILD and the second gate insulating film GI2. The existing secondpattern IST1 b may be connected to the fifth pattern IST1 e through theopening portions of the interlayer insulating film ILD and the secondgate insulating film GI2. That is, in the embodiment of FIG. 13, thefifth pattern IST1 e is used as a bridge wire. In this case, a stepdifference due to an organic film may be minimized or reduced, and thusa disconnection probability of the first sensing wire IST1 may bereduced.

In one or more embodiments, the first via film VIA1 may be present underan end portion (or boundary) of the encapsulation film TFE. In one ormore embodiments, the first via film VIA1 may be extended to cover thefourth pattern IST1 d. In this case, the first pattern IST1 a may beconnected to the fourth pattern IST1 d through opening portions of thefirst sensing insulating film ISI1 and the first via film VIA1.

The embodiment of FIG. 14 is different from the embodiment of FIG. 13 inthat the first pattern IST1 a′ of the first sensing wire IST1 isconfigured as the first sensing electrode layer ISM1. In this case, thefirst sensing insulating film ISI1 does not include an opening portionon the fourth pattern IST1 d. Descriptions of the remainingconfigurations redundant to those of FIG. 13 will be omitted.

In the embodiment of FIG. 15, a planarization film FLT′ may beconfigured of the same material through the same process as the firstvia film VIA1, in contrast to the embodiment of FIG. 5. In this case, amask for forming the planarization film FLT of FIG. 5 may be omitted.Therefore, a process cost may be reduced.

In the embodiment of FIG. 15, a second pattern IST1 b′ may be formed ofthe same material through the same process as the second connectionpattern CNP2.

The embodiment of FIG. 15 may further include a fourth pattern IST1 d′connecting a third pattern IST1 c′ and the second pattern IST1 b′, incontrast to the embodiment of FIG. 5. A second opening portion OPN2 ofthe second insulating film group ING2 may expose the third pattern IST1c′ and may be covered by a fourth pattern IST1 d′. The planarizationlayer FLT′ may include an opening portion exposing the fourth patternsIST1 d′ corresponding to the second opening portions OPN2. The fourthpattern IST1 d′ may be configured of the same material as the firstconnection pattern CNP1.

In the embodiment of FIG. 15, description of other configurationsredundant to those of FIG. 5 will be omitted.

Referring to FIG. 16, in contrast to FIG. 15, the first pattern IST1 aof the first sensing wire IST1 is not directly connected to the secondpattern IST1 b′.

The first sensing wire IST1 of the embodiment of FIG. 16 may furtherinclude a fifth pattern IST1 e′, a sixth pattern IST1 f′, and a seventhpattern IST1 g′. The fifth pattern IST1 e′ and the seventh pattern IST1g′ may be formed of the same material through the same process as thefirst connection pattern CNP1. The sixth pattern IST1 f′ may be formedof the same material through the same process as the gate electrode GE.

The first pattern IST1 a may be connected to the fifth pattern IST1 e′through the opening portion of the first sensing insulating film ISI1.As described above, in one or more embodiments, the first via film VIA1may be present under the end portion (or boundary) of the encapsulationfilm TFE. In one or more embodiments, the first via film VIA1 may beextended to cover the fifth pattern IST1 e′. In this case, the firstpattern IST1 a may be connected to the fifth pattern IST1 e′ through theopening portions of the first sensing insulating film ISI1 and the firstvia film VIA1.

The fifth pattern IST1 e′ may be connected to the sixth pattern IST1 f′through the opening portions of the interlayer insulating film ILD andthe second gate insulating film GI2.

The existing second pattern IST1 b may be connected to the sixth patternIST1 f′ through the seventh pattern IST1 g′. That is, in the embodimentof FIG. 16, the sixth pattern IST1 f′ is used as a bridge wire. In thiscase, a step difference due to the organic film may be minimized andreduced, and the disconnection probability of the first sensing wireIST1 may be lowered.

FIGS. 17 and 18 are diagrams for describing sensing electrodes andbridge electrodes according to an embodiment of the disclosure. FIG. 18is a cross-sectional view taken along a line III-III′ of FIG. 17.

The bridge electrodes CP1 may be positioned on the encapsulation filmTFE by patterning the first sensing electrode layer ISM1.

The first sensing insulating film ISI1 may cover the bridge electrodeCP1 and may include contact holes CNT exposing a part of the bridgeelectrodes CP1.

The first sensing electrodes SC1 and the second sensing electrodes SC2may be formed on the first sensing insulating film ISI1 by patterningthe second sensing electrode layer ISM2. The first sensing electrodesSC1 may be connected to the bridge electrode CP1 through the contactholes CNT.

The second sensing electrodes SC2 may have a connection pattern CP2 inthe same layer by patterning the second sensing electrode layer ISM2.Therefore, in connecting the second sensing electrodes SC2, a separatebridge electrode may be unnecessary.

According to an embodiment, each of the sensing electrodes SC1 and SC2may cover the plurality of pixels PX. In one or more embodiments, wheneach of the sensing electrodes SC1 and SC2 is configured as an opaqueconductive film, each of the sensing electrodes SC1 and SC2 may includea plurality of opening portions capable of exposing the plurality ofcovered pixels PX. For example, each of the sensing electrodes SC1 andSC2 may be configured in a mesh shape. When each of the sensingelectrodes SC1 and SC2 is configured as a transparent conductive film,each of the sensing electrodes SC1 and SC2 may be configured in a plateform that does not include an opening portion.

FIG. 19 is a diagram for describing sensing electrodes and bridgeelectrodes according to an embodiment of the disclosure.

FIG. 19 is another cross-sectional view along the line III-III′ of FIG.17.

The first sensing electrodes SC1 and the second sensing electrodes SC2may be formed on the encapsulation film TFE by patterning the firstsensing electrode layer ISM1.

The first sensing insulating film ISI1 may cover the first sensingelectrodes SC1 and the second sensing electrodes SC2 and may includecontact holes CNT exposing a portion of the first sensing electrodesSC1.

The bridge electrodes CP1 may be configured on the first sensinginsulating film ISI1 by patterning the second sensing electrode layerISM2. The bridge electrodes CP1 may be connected to the first sensingelectrodes SC1 through the contact holes CNT.

FIG. 20 is an enlarged view of a portion of the first additional areaaccording to an embodiment in contrast to the embodiment of FIG. 3. FIG.21 is an embodiment of a cross section taken along the line I-I′ of FIG.2, in accordance with the embodiment of FIG. 20. FIGS. 22-24 areembodiments of cross sections taken along the line II-II′ of FIG. 2, inaccordance with the embodiment of FIG. 20.

A point that crosses (e.g., intersects) the first boundary ED1 of thefirst side RC1 may be defined as a first point PT1. In addition, a pointthat crosses (e.g., intersects) the second boundary ED2 of the firstside RC1 may be defined as a second point PT2.

The boundary of the sensing insulating film ISI in the first bendingarea BA1 may be closer to the first side RC1 based on the first pointPT1 compared to the first side RC1 based on the second point PT2. Thatis, the boundary of the sensing insulating film ISI in the first bendingarea BA1 may be closer to the first side RC1 in the second directionDR2. For example, a distance between the first point PT1 and theboundary of the sensing insulating film ISI may be referred to as athird distance DI3. In addition, a distance between the second point PT2and the boundary of the sensing insulating film ISI may be referred toas a fourth distance DI4. As shown in FIG. 20, the fourth distance DI4may be longer than the third distance DI3. Such an arrangement may alsobe applied to the embodiment of FIG. 3.

In an embodiment, a distance between the first point PT1 and theboundary of the sensing insulating film ISI may be referred to as afifth distance DI5, with respect to the first boundary ED1. In addition,a distance between the second point PT2 and the boundary of the sensinginsulating film ISI may be referred to as a sixth distance DI6, withrespect to the second boundary ED2. In one or more embodiments, thefifth distance DI5 may be longer than the sixth distance DI6. Such anarrangement may also be applied to the embodiment of FIG. 3.

According to the embodiment described above, because a separationdistance between the boundary of the sensing insulating film ISI and thefirst side RC1 may be sufficiently secured in the first bending areaBA1, even though the substrate SUB is designed so that the radius ofcurvature CR is reduced, a crack occurrence in the sensing insulatingfilm ISI may be substantially prevented or prevented.

Referring to FIGS. 20-24, in contrast to FIG. 3, the first sensinginsulating film ISI1 is not present, and a sensing insulating film ISIcorresponding to the second sensing insulating film ISI2 is present. Inaddition, the second sensing electrode layer ISM2 is not present, and asensing electrode layer corresponding to the first sensing electrodelayer ISM1 is present. The first patterns IST1 a and IST2 a and thesensing electrodes SC1 and SC2 of the sensing wires IST1 and IST2 may bepresent as a pattern of the sensing electrode layer.

In the case of FIG. 22, a boundary of the sensing insulating film ISImay be closer to the first side RC1 than the boundary of theencapsulation film TFE. In one or more embodiments, a distance betweenthe boundary of the sensing insulating film ISI and the first side RC1may correspond to a distance D21″.

In the case of FIG. 23, the boundary of the sensing insulating film ISImay be farther from the first side RC1 than the boundary of theencapsulation film TFE. In addition, the boundary of the sensinginsulating film ISI may be closer to the first side RC1 than the damDAM. In one or more embodiments, a distance between the boundary of thesensing insulating film ISI and the first side RC1 may correspond to adistance D22″.

In a case of FIG. 24, the boundary of the sensing insulating film ISImay be farther from the first side RC1 than the boundary of the dam DAM.In addition, the boundary of the sensing insulating film ISI may becloser to the first side RC1 than the first patterns IST1 a and IST2 a.In one or more embodiments, a distance between the boundary of thesensing insulating film ISI and the first side RC1 may correspond to adistance D23″.

The distance D23″ may be longer than the distance D22″. The distanceD22″ may be longer than the distance D21″. As described above, as thedistance between the boundary of the sensing insulating film ISI and thefirst side RC1 is increased, a probability that a crack occurs in thesensing insulating film ISI may be reduced.

FIGS. 25 and 26 are embodiments of the sense electrodes and the sensingwires in accordance with the embodiment of FIG. 20.

In the embodiments of FIGS. 25 and 26, a bridge electrode may beunnecessarily different from the embodiments of FIGS. 17-19.

For example, as shown in FIG. 25, the sensing electrodes SC1 and SC2 mayhave substantially the same area and may be connected to the firstpatterns IST1 a and IST2 a of the sensing wires IST1 and IST2,respectively. Each of the first patterns IST1 a and IST3 a may beconnected to different first pads PDE1.

In the embodiment of FIG. 26, the area of a first sensing electrode SC1′and the area of second sensing electrodes SC21′ to SC26′ may bedifferent from each other. For example, the area of the first sensingelectrode SC1′ may be greater than that of each of the second sensingelectrodes SC21′ to SC26′. The area of the first sensing electrode SC1′and the area of the third sensing electrode SC3′ may be substantiallythe same. A width of the first sensing electrode SC1′ and the thirdsensing electrode SC3′ in a fourth direction DR4 may be greater than alength in a fifth direction DR5.

The first sensing electrode SC1′ may correspond to the second sensingelectrodes SC21′, SC22′, and SC23′. For example, the first sensingelectrode SC1′ may form a mutual capacitance with the most adjacentsecond sensing electrodes SC21′, SC22′, and SC23′. Here, the “mostadjacent” may refer to a case in which the first sensing electrode SC1′is the most adjacent to the second sensing electrodes SC21′, SC22′, andSC23′ in the fourth direction DR4 or a direction opposite to the fourthdirection DR4. In one or more embodiments, a length of the first sensingelectrode SC1′ in the fifth direction DR5 may correspond to a sum oflengths of the corresponding second sensing electrodes SC21′, SC22′, andSC23′ in the fifth direction DR5.

The third sensing electrode SC3′ may correspond to second sensingelectrodes SC24′, SC25′, and SC26′. For example, the third sensingelectrode SC3′ may form a mutual capacitance with the most adjacentsecond sensing electrodes SC24′, SC25′, and SC26′. Herein, the “mostadjacent” may refer to a case in which the third sensing electrode SC3′is the most adjacent to the second sensing electrodes SC24′, SC25′, andSC26′ in the fourth direction DR4 or a direction opposite to the fourthdirection DR4. In one or more embodiments, a length of the third sensingelectrode SC3′ in the fifth direction DR5 may correspond to a sum oflengths of the corresponding second sensing electrodes SC24′, SC25′, andSC26′ in the fifth direction DR5.

The first sensing electrode SC1′ may be connected to the first patternIST1 a′, and the third sensing electrode SC3′ may be connected to thefirst pattern IST3 a′. The first patterns IST1 a′ and IST3 a′ may beconnected to different first pads PDE1, respectively.

The second sensing electrode SC21′ may be connected to the secondsensing electrode SC24′ through the first pattern IST21 a′. The secondsensing electrode SC22′ may be connected to the second sensing electrodeSC25′ through the first pattern IST22 a′. The second sensing electrodeSC23′ may be connected to the second sensing electrode SC26′ through thefirst pattern IST23 a′. The second sensing electrodes SC24′, SC25′, andSC26′ may be connected to different first pads PDE1 through the firstpatterns IST24 a′, IST25 a′, and IST26 a′, respectively.

For example, the first patterns IST1 a′ and IST3 a′ may be connected toreception channels of the touch IC through the first pads PDE1,respectively. For example, the first patterns IST24 a′, IST25 a′, andIST26 a′ may be connected to transmission channels of the touch ICthrough the first pads PDE1, respectively. The touch IC may sequentiallytransmit driving signals to the first patterns IST24 a′, IST25 a′, andIST26 a′ and receive sensing signals corresponding to the respectivedriving signals from the first patterns IST1 a′ and IST3 a′. Accordingto an embodiment, a method of transmitting and receiving a signal may besuitably changed.

The fourth direction DR4 and the fifth direction DR5 may be directionsorthogonal to each other. A plane formed by the fourth direction DR4 andthe fifth direction DR5 may be parallel to the plane formed by the firstdirection DR1 and the second direction DR2.

The embodiment of FIG. 26 may reduce the number of the sensing wiresIST1 and IST2 connected to the pad in contrast to the embodiment of FIG.25. In a case of FIG. 25, it is not necessary to sequentially transmitthe driving signals, and thus a sensing time may be reduced.

FIGS. 27-29 are diagrams for describing a pixel according to anembodiment of the disclosure.

Referring to FIG. 27, a display device 10 according to an embodiment ofthe disclosure includes a timing controller 11, a data driver 12, a scandriver 13, a light emitting driver 14, and a pixel unit 15.

The timing controller 11 may receive grayscale values (or gray levels)and control signals for each image frame from an external processor. Thetiming controller 11 may render the grayscale values to correspond to aspecification of the display device 10. For example, the externalprocessor may provide a red grayscale value (or red grayscale level), agreen grayscale value (or green grayscale level), and a blue grayscalevalue (or blue grayscale level) for each unit dot. However, for example,when the pixel unit 15 is a pentile structure, because adjacent unitdots share pixels, the pixels may not correspond to the respectivegrayscale values on a one-to-one basis. In this case, rendering of thegrayscale values is necessary. When the pixels correspond to therespective grayscale values on a one-to-one basis, rendering of thegrayscale values may be unnecessary. The grayscale values that are notrendered or rendered may be provided to the data driver 12. In addition,the timing controller 11 may provide the control signals to the datadriver 12, the scan driver 13, the light emitting driver 14, and thelike suitable for respective specifications to display a frame.

The data driver 12 may generate data voltages to be provided to datalines D1, D2, D3, and Dn using the grayscale values and the controlsignals. For example, the data driver 12 may sample the grayscale valuesusing a clock signal, and apply the data voltages corresponding to thegrayscale values to the data lines D1 to Dn in units of pixel rows,where n may be an integer greater than zero.

The scan driver 13 may receive a clock signal, a scan start signal, andthe like from the timing controller 11 to generate scan signals to beprovided to scan lines S1, S2, S3, and Sm, where m may be an integergreater than zero.

The scan driver 13 may sequentially supply the scan signals having apulse of a turn-on level to the scan lines S1, S2, S3, and Sm. The scandriver 13 may include scan stages configured in a form of shiftregisters. The scan driver 13 may generate the scan signals in a mannerof sequentially transferring the scan start signal, which is a pulseform of a turn-on level, to a next scan stage under control of the clocksignal.

The light emitting driver 14 may receive a clock signal, a lightemitting stop start signal, and the like from the timing controller 11to generate light emitting signals to be provided to light emittinglines E1, E2, E3, and Eo. For example, the light emitting driver 14 maysequentially provide light emitting signals having a pulse of a turn-offlevel to the light emitting lines E1 to Eo. For example, each lightemitting stage of the light emitting driver 14 may be configured in aform of a shift register, and may generate the light emitting signals ina manner of sequentially transferring the light emitting stop startsignal, which is a pulse form of a turn-off level, to a next lightemitting stage under control of the clock signal, where o may be aninteger greater than zero.

The pixel unit 15 includes pixels. Each pixel PXij may be connected tocorresponding data line, scan line, and light emitting line, where i andj may be natural numbers. The pixel PXij may refer to a pixel where ascan transistor is connected to an i-th scan line and a j-th data line.For example, a scan input terminal of the pixel PXij may be connected tothe i-th scan line, and a data input terminal of the pixel PXij may beconnected to the j-th data line.

Referring to FIG. 28, the pixel PXij includes transistors T1, T2, T3,T4, T5, T6, and T7, a storage capacitor Cst, and a light emitting diodeLD.

Hereinafter, a circuit configured of a p-type transistor (p-channeltransistor) will be described as an example. However, those skilled inthe art will be able to design a circuit configured of an n-typetransistor (n-channel transistor) by differentiating a polarity of avoltage applied to a gate terminal. Similarly, those skilled in the artwill be able to design a circuit configured of a combination of a p-typetransistor and an n-type transistor. The p-type transistors arecollectively referred to as transistors in which an amount of aconducted current increases when a voltage difference between a gateelectrode and a source electrode increases in a negative direction. Then-type transistors are collectively referred to as transistors in whichan amount of conducted current increases when a voltage differencebetween a gate electrode and a source electrode increases in a positivedirection. The transistor may be configured in various suitable formssuch as a thin film transistor (TFT), a field effect transistor (FET),and a bipolar junction transistor (BJT).

The first transistor T1 may have a gate electrode connected to a firstnode N1, a first electrode connected to a second node N2, and a secondelectrode connected to a third node N3. The first transistor T1 may bereferred to as a driving transistor.

The second transistor T2 may have a gate electrode connected to the i-thscan line Si, a first electrode connected to the data line Dj, and asecond electrode connected to the second node N2. The second transistorT2 may be referred to as a scan transistor.

The third transistor T3 may have a gate electrode connected to the i-thscan line Si, a first electrode connected to the first node N1, and asecond electrode connected to the third node N3. The third transistor T3may be referred to as a diode-connected transistor.

The fourth transistor T4 may have a gate electrode connected to an(i−1)-th scan line S(i−1), a first electrode connected to the first nodeN1, and a second electrode connected to an initialization line INTL. Inan embodiment, the gate electrode of the fourth transistor T4 may beconnected to another scan line. The fourth transistor T4 may be referredto as a gate initialization transistor.

The fifth transistor T5 may have a gate electrode connected to the i-thlight emitting line Ei, a first electrode connected to a first powerline ELVDDL, and a second electrode connected to the second node N2. Thefifth transistor T5 may be referred to as a light emitting transistor.In an embodiment, the gate electrode of the fifth transistor T5 may beconnected to another light emitting line.

The sixth transistor T6 may have a gate electrode connected to the i-thlight emitting line Ei, a first electrode connected to the third nodeN3, and a second electrode connected to an anode of the light emittingdiode LD. The sixth transistor T6 may be referred to as a light emittingtransistor. In an embodiment, the gate electrode of the sixth transistorT6 may be connected to another light emitting line.

The seventh transistor T7 may have a gate electrode connected to thei-th scan line, a first electrode connected to the initialization lineINTL, and a second electrode connected to the anode of the lightemitting diode LD. The seventh transistor T7 may be referred to as ananode initialization transistor. In an embodiment, the gate electrode ofthe seventh transistor T7 may be connected to another scan line.

A first electrode of the storage capacitor Cst may be connected to thefirst power line ELVDDL and a second electrode may be connected to thefirst node N1.

The anode of the light emitting diode LD may be connected to the secondelectrode of the sixth transistor T6 and a cathode may be connected to asecond power line ELVSSL. The light emitting diode LD may be configuredof an organic light emitting diode, an inorganic light emitting diode, aquantum dot light emitting diode, or the like.

The first power line ELVDDL may be supplied with a first power voltage,the second power line ELVSSL may be supplied with a second powervoltage, and the initialization line INTL may be supplied with aninitialization voltage. For example, the first power voltage may begreater than the second power voltage. For example, the initializationvoltage may be equal to or greater than the second power voltage.

A method of driving a pixel according to an embodiment of the disclosurewill be described with reference to FIG. 29.

First, a data voltage DATA(i−1)j for an (i−1)-th pixel is applied to thedata line Dj and a scan signal of a turn-on level (low level) is appliedto the (i−1)-th scan line S(i−1).

In one or more embodiments, because a scan signal of a turn-off level (ahigh level) is applied to the i-th scan line Si, the second transistorT2 is turned off and the data voltage DATA(i−1)j is substantiallyprevented or prevented from being drawn into the pixel PXij.

In one or more embodiments, because the fourth transistor T4 is turnedon, the first node N1 is connected to the initialization line INTL, anda voltage of the first node N1 is initialized. Because the lightemitting signal of the turn-off level is applied to the light emittingline Ei, the transistors T5 and T6 are turned off, and a light emissionof an unnecessary light emitting diode LD according to an initializationvoltage application process is substantially prevented or prevented.

Next, a data voltage DATAij for the i-th pixel PXij is applied to thedata line Dj, and the scan signal of the turn-on level is applied to thei-th scan line Si. Therefore, the transistors T2, T1, and T3 are turnedon, and the data line Dj and the first node N1 are electricallyconnected with each other. Thus, a compensation voltage obtained bysubtracting a threshold voltage of the first transistor T1 from the datavoltage DATAij is applied to the second electrode of the storagecapacitor Cst (that is, the first node N1), and the storage capacitorCst maintains a voltage corresponding to a difference between the firstpower voltage and the compensation voltage. Such a period may bereferred to as a threshold voltage compensation period.

In one or more embodiments, because the seventh transistor T7 is turnedon, the anode of the light emitting diode LD and the initialization lineINTL are connected with each other, and the light emitting diode LD isinitialized to a charge amount corresponding to a voltage differencebetween the initialization voltage and the second power voltage.

Thereafter, as the light emitting signal of the turn-on level is appliedto the light emitting line Ei, the transistors T5 and T6 may be turnedon. Therefore, a driving current path is formed as a path of the firstpower line ELVDDL, the fifth transistor T5, the first transistor T1, thesixth transistor T6, the light emitting diode LD, and the second powerline ELVSSL.

A driving current amount flowing to the first electrode and the secondelectrode of the first transistor T1 is adjusted according to thevoltage maintained in the storage capacitor Cst. The light emittingdiode LD emits light at a luminance corresponding to the driving currentamount. The light emitting diode LD emits light until the light emittingsignal of the turn-off level is applied to the light emitting line Ei.

The drawings referred to so far and the detailed description of thedisclosure described herein are merely examples of the disclosure, areused for merely describing the disclosure, and are not intended to limitthe meaning and the scope of the disclosure described in claims.Therefore, those skilled in the art will understand that variousmodifications and equivalent other embodiments are possible from these.Thus, the true scope of the disclosure should be determined by thetechnical spirit of the appended claims, and equivalents thereof.

What is claimed is:
 1. A display device comprising: a substratecomprising a display area, a non-display area surrounding an outerperiphery of the display area, a first additional area connected to thenon-display area at a first boundary, and a second additional areaconnected to the first additional area at a second boundary; pixels onthe display area; an encapsulation film on the pixels; sensingelectrodes on the encapsulation film; pads on the second additionalarea; sensing wires connecting the sensing electrodes and the pads; afirst sensing insulating film on the encapsulation film; and a secondsensing insulating film on the first sensing insulating film, thesensing electrodes, and the sensing wires, wherein the substratecomprises a curved first side in the first additional area and the firstadditional area decreases in width from the first boundary to the secondboundary, and a boundary of the first sensing insulating film is closerto the first side than a boundary of the second sensing insulating filmis to the first side.
 2. The display device according to claim 1,wherein the boundary of the first sensing insulating film is not coveredby the second sensing insulating film.
 3. The display device accordingto claim 1, wherein the substrate comprises a first bending areaextending from the first side to overlap the non-display area.
 4. Thedisplay device according to claim 3, wherein the boundary of the firstsensing insulating film and the boundary of the second sensinginsulating film are on the first bending area.
 5. The display deviceaccording to claim 4, wherein the second additional area comprises asecond bending area, and the first bending area and the second bendingarea do not overlap.
 6. The display device according to claim 1, whereinthe encapsulation film comprises an organic film, the display devicefurther comprising a dam at a boundary of the organic film, and whereinthe boundary of the second sensing insulating film is closer to thefirst side than to the dam.
 7. The display device according to claim 1,wherein the encapsulation film comprises an organic film, the displaydevice further comprising a dam at a boundary of the organic film, andwherein the boundary of the second sensing insulating film is fartherfrom the first side than to the dam.
 8. The display device according toclaim 7, wherein the boundary of the second sensing insulating film iscloser to the first side than to the sensing wires.
 9. The displaydevice according to claim 1, wherein the first sensing insulating filmis between the encapsulation film and the sensing wires.
 10. The displaydevice according to claim 9, wherein the sensing electrodes are on thefirst sensing insulating film, the display device further comprisingbridge electrodes under the first sensing insulating film, and whereinthe sensing electrodes are connected to the bridge electrodes throughcontact holes of the first sensing insulating film.
 11. The displaydevice according to claim 9, wherein the sensing electrodes are underthe first sensing insulating film, the display device further comprisingbridge electrodes on the first sensing insulating film, and wherein thebridge electrodes are connected to the sensing electrodes throughcontact holes of the first sensing insulating film.
 12. The displaydevice according to claim 1, wherein the first sensing insulating filmis between the sensing wires and the second sensing insulating film. 13.The display device according to claim 12, wherein the sensing electrodesare on the first sensing insulating film, the display device furthercomprising bridge electrodes under the first sensing insulating film,and wherein the sensing electrodes are connected to the bridgeelectrodes through contact holes of the first sensing insulating film.14. The display device according to claim 12, wherein the sensingelectrodes are under the first sensing insulating film, the displaydevice further comprising bridge electrodes on the first sensinginsulating film, and wherein the bridge electrodes are connected to thesensing electrodes through contact holes of the first sensing insulatingfilm.
 15. A display device comprising: a substrate comprising a displayarea, a non-display area surrounding an outer periphery of the displayarea, a first additional area connected to the non-display area at afirst boundary, and a second additional area connected to the firstadditional area at a second boundary; pixels on the display area; anencapsulation film on the pixels; sensing electrodes on theencapsulation film; pads on the second additional area; sensing wiresconnecting the sensing electrodes and the pads; a first sensinginsulating film on the encapsulation film; and a second sensinginsulating film on the first sensing insulating film, the sensingelectrodes, and the sensing wires, wherein the substrate comprises acurved first side in the first additional area and the first additionalarea decreases in width from the first boundary to the second boundary,and a boundary of the second sensing insulating film is spaced apartfrom the first side by 200 μm or more.
 16. The display device accordingto claim 15, wherein the first side of the first additional area and thenon-display area commonly comprise a first bending area, the secondadditional area comprises a second bending area, and the first bendingarea and the second bending area do not overlap.
 17. The display deviceaccording to claim 15, wherein the encapsulation film comprises anorganic film, the display device further comprising a dam at a boundaryof the organic film, and wherein the boundary of the second sensinginsulating film is closer to the first side than to the dam.
 18. Thedisplay device according to claim 15, wherein the encapsulation filmcomprises an organic film, the display device further comprising a damat a boundary of the organic film, and wherein the boundary of thesecond sensing insulating film is farther from the first side than tothe dam.
 19. The display device according to claim 18, wherein theboundary of the second sensing insulating film is closer to the firstside than to the sensing wires.
 20. A display device comprising: asubstrate comprising a display area, a non-display area surrounding anouter periphery of the display area, a first additional area connectedto the non-display area at a first boundary, and a second additionalarea connected to the first additional area at a second boundary; pixelson the display area; an encapsulation film on the pixels; sensingelectrodes on the encapsulation film; pads on the second additionalarea; sensing wires connecting the sensing electrodes and the pads; anda sensing insulating film on the sensing electrodes and the sensingwires, wherein the substrate comprises a curved first side in the firstadditional area and the first additional area decreases in width fromthe first boundary to the second boundary, the substrate comprises afirst bending area extending from the first side to overlap thenon-display area, and in the first bending area, a boundary of thesensing insulating film is farther from the first side from a firstpoint of the first side crossing the first boundary than to a secondpoint of the first side crossing the second boundary.